The impedance of the drift layer of silicon carbide SiC devices is lower than that of Si devices, and high withstand voltage and low impedance can be achieved with MOSFET structure without conductivity modulation. Moreover, MOSFETs do not generate a tail current in principle, so that switching losses can be significantly reduced and miniaturization of the heat dissipation components can be achieved when replacing IGBTs with SiC-MOSFETs. In addition, SiC-MOSFET operating frequency can be much higher than the IGBT, its circuit inductor capacitor parts smaller, easy to realize the system small size and weight. Compared with the same 600V ~ 900V voltage Si-MOSFET, SiC-MOSFET chip area is small, can be used in smaller packages, and the body diode recovery loss is very small. Currently, SiC MOSFETs are mainly used in high-end industrial power supplies, high-end inverters and converters, high-end motor drag and control, etc.