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Description
lThis Power MOSFET is produced using advanced Trenchtechnology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DCpower conversion, load switch and industrial power applications.
Features
lVDS=30V,ID=120A
lRDS(on)Typ=1.15mΩ@VGS=10V
lRDS(on)Typ=1.5mΩ@VGS=4.5V
lLow FOM RDS(on)×Qgd
l100% avalanche tested
lEasy to use/drive
lRoHS compliant
Application
lPower Management
lPWM Application
lLoad Switch
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