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N-Channel Power MOSFET
Characteristic | Symbol | Max | Unit |
Drain-SourceVoltage | BVDSS | 30 | V |
Gate-SourceVoltage | VGS | 20 | V |
DrainCurrent(continuous) | ID | 5 | A |
DrainCurrent(pulsed) | IDM | 18 | A |
TotalDeviceDissipation | PD | 1400 | mW |
TA=25℃ | |||
Junction | TJ | 150 | ℃ |
StorageTemperature | Tstg | -55to+150 | ℃ |
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