Driver Transistors NPN Silicon

Our advantages:

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description:
The MMBTA05 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Encapsulated in the SOT-23 surface-mount package, this transistor offers compact size combined with reliable performance, making it suitable for various electronic circuits where space-saving and efficiency are crucial.

Features:

T_ype: NPN

V_ceo: 60V (Collector-Emitter Voltage)

I_c: 0.1μA (Collector Current, minimum)

P_d: 225mW (Power Dissipation)

f_T: 100MHz (Transition Frequency)

Applications:

Amplification: Ideal for small-signal amplification in audio, RF, and other low-power applications due to its high transition frequency (fT) of 100MHz.

Switching: Can be used in switching circuits where low current requirements and moderate voltage capabilities are needed.

Compact Electronics: Suitable for miniaturized electronic devices and applications where space constraints are a concern.