Description

lThis P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

lVDS=-100V,ID=-20A,RDS(ON)<90mΩ@VGS=-10V

lLow gate charge.

lGreen device available.

lAdvanced high cell denity trench technology for ultra lowRDS(ON).

lExcellent package for good heat dissipation.