Description

lThe SL2308 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.

Features

l60V/1 . 8 A, RDS(ON)=1 35mΩ(typ.)@VGS=1 0V

l60V/ 1 ..5 A, RDS(ON)= 1 54mΩ (typ.)@VGS=4.5V

lSuper high design for extremely low RDS(ON)

lExceptional on-resistance and Maximum DCcurrent capability

lThis is a Full RoHS compliance

lSOT23-3 package design

Application

lPower Management in Note Book

lPortable Equipment

lBattery Powered System