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Description
This P-Channel MOSFET uses advanced trench technology and design to provide excellent Rpsjon, with low gate charge. It can be used in a wide variety of applications.
Features
VDS=-60V, ID=-8.5A, RDS(ON)<30m Ω @VGS=-10V
Low gate charge.
Green device available.
Advanced high cell denity trench technology for uitra low RDS(ON)
Excellent package for good heat dissipation.
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