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SL3N06 N-Channel Power MOSFET SOT-23 SL3N06 N-Channel Power MOSFET SOT-23 SL3N06 N-Channel Power MOSFET SOT-23
SL3N06 N-Channel Power MOSFET SOT-23

Type:N-Channel

Vdss:60V

Id:3A

Pd:1.38W

RDS(on)@Vgs,Id:90mΩ@10V,3A

Vgs(th)@Id:3V@250uA

Qg@Vgs-

Ciss@Vds:550pF@25V

Crss@Vds-

Working Temperature:+150℃@(Tj)


Product Details

MAXIMUM RATINGS

Characteristic Symbol Max Unit
Drain-SourceVoltage BVDSS 60 V
Gate-SourceVoltage VGS 20 V
DrainCurrent-continuous IDR 3 A
DrainCurrent-pulsed IDRM 10 A

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD 1380 mW/℃
TA=25℃
Derate above25℃ 3.8 mW/℃
Thermal Resistance Junction to Ambient RΘJA 90 ℃/W
Junction andStorage Temperature TJ,Tstg 150℃,-55to+150℃

SL3N06_00.jpg


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