General Features
● V_DS =100V,I_D =80A R_DS(ON) < 9mΩ @ V_GS=10V  
● Special process technology for high ESD capability  
● High density cell design for ultra low R_dson  
● Fully characterized avalanche voltage and current  
● Good stability and uniformity with high E_AS  
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits  
● Uninterruptible power supply