How does the IGBT module conduct?
The structure of silicon IGBT is very similar to that of power MOSFET. The main difference is that p substrate and n buffer layer are added to IGBT (NPT- non-punch-through -IGBT technology does not add this part). One MOSFET drives two bipolar devices. The application of substrate produces J1 junction between P and N regions of the tube. When the positive gate bias reverses the P- base region under the gate, an N-channel is formed, and at the same time, an electronic current appears, which completely generates current in the form of a power MOSFET.
If the voltage generated by this electron current is in the range of 0.7V, J1 will be biased forward, and some holes will be injected into the N region, which will adjust the resistivity between anode and cathode, reduce the total loss of power conduction and start the second charge flow. As a result, two different current topologies temporarily appear in the semiconductor layer: one is the electronic current (MOSFET current); Hole current (bipolar).
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