Parameter symbol of semiconductor triode and its significance
If the common emitter current amplification factor β=IC/IB =100, the collector current IC=β*IB=10mA. When the collector resistance is 500Ω, the voltage drop VRC=10mA*500Ω=5V, while the voltage drop VCE=5V between the collector and emitter of the transistor. If a small alternating current ib is superimposed in the base bias circuit, the corresponding alternating current ic will appear in the collector circuit, with c/ib=β, thus realizing the current amplification of the bipolar transistor.
The basic working principle of metal-oxide-semiconductor field effect transistor is to induce a conductive channel in the semiconductor through the electric field effect on the semiconductor surface. When the gate G voltage VG increases, the majority carrier holes on the surface of the P-type semiconductor gradually decrease and are exhausted, while the electrons gradually accumulate to inversion. When the surface is inverted, the electron accumulation layer will form a conductive channel between the n+ source region S and the n+ drain region D. When VDS≠0, a large current IDS flows between the source and drain electrodes. The gate-source voltage required for the semiconductor surface to achieve strong inversion is called the threshold voltage VT. When VGS is larger than VT and takes different values, the conductivity of the inversion layer will change, and different IDS will be produced under the same VDS, so that the gate-source voltage VGS can control the source-drain current IDS.
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