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【Daily Highlight】The Medium Voltage MOSFET SL2309A

Updated: 2024-03-22
Views: 8635

The SL2309A is a P-channel MOSFET with excellent characteristics such as -60V drain-source voltage, -2.0A continuous drain current, low on-state resistance (158mΩ@-10V,-2A), and low threshold voltage (-1.9V@-250uA). This power device is suitable for the power and control system design of electric Vertical Take-Off and ……

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Everything about Flip Chip Technology

Updated: 2024-03-21
Views: 12511

Flip chip technology originated from IBM, which developed the process of creating bumps on chips for flip chip soldering in 1960. The process involved surrounding the bumps with 95Pb5Sn encasing electroplated NiAu bumps. Later, PbSn bumps were used, employing Controlled Collapse Component Connection (C4) technology, in……

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【Daily Highlight】The Medium Voltage MOSFET BAS70W-05

Updated: 2024-03-21
Views: 8328

The BAS70W-05 is an N-channel MOSFET with a 70V drain-source voltage and a maximum forward average rectified current of 100mA. It features high current-carrying capacity, low forward voltage drop, and fast switching speed. These characteristics make the BAS70W-05 an ideal current control and voltage regulation componen……

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Everything about bipolar junction transistors (BJTs)

Updated: 2024-03-21
Views: 11931

The bipolar junction transistor was invented by a research team at Bell Laboratories in 1947. The first transistor consisted of two metal wires with sharp endpoints making point contact with a germanium substrate. While primitive by today's standards, this first transistor significantly transformed the entire electroni……

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What is a semiconductor?

Updated: 2024-03-20
Views: 10285

In daily life, all objects can be roughly classified by their electrical conductivity into three categories: conductors, semiconductors, and insulators. This is easy to understand; objects either conduct electricity, do not conduct electricity, or conduct a little bit. It is precisely these materials that are ambiguou……

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【Daily Highlight】The Medium Voltage MOSFET SL4421

Updated: 2024-03-20
Views: 8584

The SL4421 is a P-channel MOSFET with a -60V drain-source voltage and a -8.5A continuous drain current, known for its low on-state resistance (23mΩ at -10V, -8A) and a relatively low threshold voltage (-1.6V at 250uA). These characteristics enable the SL4421 to control, protect, and manage battery charging and discharg……

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【Daily Highlight】The Medium Voltage MOSFET SL12N10

Updated: 2024-03-19
Views: 9319

The SL12N10 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 12A. It has gained attention for its low on-state resistance (130mΩ @ 10V, 220mA) and relatively low threshold voltage (2V @ 250uA). In the design of today's portable charging devices such as power banks and wireles……

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【Daily Highlight】The Medium Voltage MOSFET SL30N06D

Updated: 2024-03-18
Views: 7914

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the contin……

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【Daily Highlight】The Medium Voltage MOSFET 2N7002KW

Updated: 2024-03-15
Views: 8564

The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……

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What is the difference between MOS tube and IGBT?

Updated: 2024-03-14
Views: 9410

In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……

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One article understands IGBT

Updated: 2024-03-14
Views: 9395

The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……

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【Daily Highlight】The Medium Voltage MOSFET MMBF170L

Updated: 2024-03-14
Views: 8817

MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, el……

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