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  • Updated: 2023-09-11
  • Views: 9430
Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, just a few years ago, the preferred solution for many applications was the Insulated Gate Bipolar Transistor (IGBT). There is……
  • Updated: 2023-09-11
  • Views: 8839
Although some may consider IGBT as "conventional" technology, it still plays a significant role in high-power applications. Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, j……
  • Updated: 2023-09-11
  • Views: 8717
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-11
  • Views: 9118
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-11
  • Views: 11390
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-09
  • Views: 9252
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 11966
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 11030
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 8642
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……
  • Updated: 2023-09-09
  • Views: 9124
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……
  • Updated: 2023-09-09
  • Views: 9139
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……

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