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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:NPN
Vceo:50V
Ic:150mA
Pd:150mW
VCE(sat)@Ic,Ib:250mV@100mA,10mA
hFE@Ic,Vce:120@2mA,6V
fT:80MHz
Working Temperature:+125℃@(Tj)
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