NPN Silicon Epitaxial Planar Transistor

Description:
The BC847B is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose small-signal amplification and switching applications. It offers a Vceo of 45V and a maximum collector current (Ic) of 100mA, housed in a compact SOT-23 package. This transistor is known for its high current gain and low saturation voltage, making it suitable for a wide range of electronic circuits where efficiency and reliability are key.

Features

● For switching and AF amplifier applications.

● As complementary types the PNP transistors.

● BC856...BC858 is recommended.

Applications:
● The BC847B NPN transistor is well-suited for a variety of electronic applications including:
● Signal Amplification: Used in audio amplifiers, sensor interfaces, and other small-signal amplification circuits.
● Switching Circuits: Efficient switching operations due to low saturation voltage, ideal for low-power switching applications.
● RF Amplification: Suitable for high-frequency signal amplification up to 300MHz.
● Voltage Regulation: Used in voltage regulators and power management circuits in low-power devices.
● Sensor Interfaces: Provides signal conditioning and amplification in sensor applications.