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BCX52-16 60V, 1A PNP Medium Power Transistors BCX52-16 60V, 1A PNP Medium Power Transistors BCX52-16 60V, 1A PNP Medium Power Transistors
BCX52-16 60V, 1A PNP Medium Power Transistors

Type: PNP

VCEO: 60V

IC: 1A

Pd: 500mW

VCE(sat)@Ic,Ib: 500mV@500mA,50mA

hFE@Ic,Vce: 100@150mA,2V

fT: 125MHz

Working Temperature:-65℃~+150℃@(Tj)

Product Details

Description

PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

Features

 High current

 Three current gain selections

 High power dissipation capability

 Exposed heatsink for excellent thermal and electrical conductivity (SOT89)

 Leadless very small SMD plastic package with medium power capability (SOT89)

Applications

 Linear voltage regulators

 High-side switches

 Battery-driven devices

 Power management

 MOSFET drivers

 Amplifiers

Quick reference data

Symbol Parameter Conditions Max Unit
VCEO collector-emitter voltage open base 60 V
IC collector current 1 A
VCEsat collector-emitter
saturation voltage
IC = 500mA; IB = 50mA 0.5 V




BCX52-16 SOT-89_00.jpg


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