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CZT5551 NPN Bipolar Transistor SOT-223 CZT5551 NPN Bipolar Transistor SOT-223 CZT5551 NPN Bipolar Transistor SOT-223
CZT5551 NPN Bipolar Transistor SOT-223

Type: NPN

VCEO160V

IC: 600mA

PC1.5W

Icbo: 50nA

VCE(sat)@IC,IB200mV@50mA,5mA

hFE@IC,VCEO: 80@5V,1mA

fT100MHz

Working Temperature: -55℃~+150℃@(Tj)

Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description:

The CZT5551 is a NPN bipolar (BJT)  transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Features:

● Type: NPN bipolar transistor
● VCEO: 160V

● IC: 600mA

● Power Dissipation (PC): 1.5W

● Low Leakage Current (Icbo): 50nA

● Low Saturation Voltage (VCE(sat)): 200mV @ 50mA, 5mA

● High Current Gain (hFE): 80 @ 5V, 1mA

● Transition Frequency (fT): 100MHz



Applications

● High voltage amplifier applications.

Quick reference dat

Symbol Parameter Conditions Max Unit
VCEO collector-emitter voltage open base 160 V
IC collector current 0.6 A
VCEsat collector-emitter
saturation voltage
IC = 50mA; IB = 5mA 0.2 V


CZT5551_00.jpg


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