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CZT5551 Silicon NPN Transistor Surface Mount CZT5551 Silicon NPN Transistor Surface Mount CZT5551 Silicon NPN Transistor Surface Mount
CZT5551 Silicon NPN Transistor Surface Mount

Type: NPN

VCEO160V

IC: 600mA

PC1.5W

Icbo: 50nA

VCE(sat)@IC,IB200mV@50mA,5mA

hFE@IC,VCEO: 80@5V,1mA

fT100MHz

Working Temperature: -55℃~+150℃@(Tj)

Product Details

Description

The CZT5551 is a NPN bipolar (BJT)  transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Applications

High voltage amplifier applications.

Quick reference dat

Symbol Parameter Conditions Max Unit
VCEO collector-emitter voltage open base 160 V
IC collector current 0.6 A
VCEsat collector-emitter
saturation voltage
IC = 50mA; IB = 5mA 0.2 V


CZT5551_00.jpg


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