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Diode & Transistor
Transistor
Vceo:30V
Ic:1A
Pd:500mW
VCE(sat)@Ic,Ib:300mV@1A,100mA
hFE@Ic,Vce:100@1A,2V
fT:150MHz
Working temperature:-55℃~+150℃@(Tj)
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