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MMBT2907 PNP Bipolar Transistor SOT-23 MMBT2907 PNP Bipolar Transistor SOT-23 MMBT2907 PNP Bipolar Transistor SOT-23
MMBT2907 PNP Bipolar Transistor SOT-23

Type:PNP

Vceo:-40V

Ic:-600mA

Pd:250mW

fT:200MHz

Product Details

Our advantages:

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description:
The MMBT2907 is a high-performance PNP bipolar junction transistor (BJT) known for its robust characteristics and versatile applications in electronics. Designed for efficiency and reliability, it offers a collector-emitter voltage (Vceo) of -40V and a maximum collector current (Ic) of -600mA. This makes it suitable for both low and medium power circuits where precise current control and signal amplification are critical. Encapsulated in a compact SOT-23 package, it facilitates easy integration into modern electronic designs.

Features:
● Epitaxial planar die construction
● Complementary NPN Type available(MMBT2222)


Applications:
The MMBT2907 transistor finds applications in various electronic circuits including:

● Switching Circuits: Used in low to medium power switching applications due to its high current handling capacity.
● Audio Amplification: Ideal for audio circuits requiring signal amplification and low noise characteristics.
● Voltage Regulation: Integrated into voltage regulator circuits for stable power supply solutions.
● Signal Processing: Utilized in signal processing circuits and mixers for reliable signal handling.
● Oscillators and RF Circuits: Suitable for use in oscillators and radio frequency (RF) circuits due to its high transition frequency (fT).

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