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Bipolar Transistor (BJT)

MMBT5551 NPN General Purpose Bipolar Junction Transistor MMBT5551 NPN General Purpose Bipolar Junction Transistor MMBT5551 NPN General Purpose Bipolar Junction Transistor
MMBT5551 NPN General Purpose Bipolar Junction Transistor
VCEO(V)：160V
IC(A)：0.6A
PD(W)：0.3W
VCE(sat)(V)：0.5V
fT(MHz)：80MHz
Package：SOT-23
Inquiry Datasheet

Product Details

Description 

This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers.

Features

● Epitaxial planar die construction.

● Complementary PNP type available MMBT5401.

● also available in lead free version.

Applications

Ideal fot medium power amplification and switching.

Quick reference data

Symbol

Parameter

Conditions

Max

Unit

VCEO

collector-emitter voltage

open base

160

V

IC

collector current

0.6

A

VCEsat

collector-emitter

saturation voltage

IC = 50mA; IB = 10mA

0.5

V

MMBT5551_00.jpg


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