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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:Double PNP
Vceo:40V
Ic:200mA
Pd:200mW
Icbo-
VCE(sat)@Ic,Ib:400mV@50mA,5mA
hFE@Ic,Vce:100@10mA,1V
fT:250MHz
Working Temperature:+150℃@(Tj)
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