Home
About Us
Products
Events
Perspectives
Technical Blogs
Sales Support
Contact Us
Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:PNP
Vceo: 25V
Ic: 1.5A
Pd: 300mW
VCE(sat)@Ic,Ib: 500mV@800mA,80mA
fT: 100MHz
FEATURES
High Collector Current.
Complementary to SS8050.
links exchange: SiteMap
Copyright ©2015-2022 Shenzhen SlkorMicro Semicon Co.,Ltd. All rights reserved
Service hotline
+86 0755-83044319
Hall Effect Sensor
Get product information
WeChat