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6N136S Optocoupler DIP8 6N136S Optocoupler DIP8 6N136S Optocoupler DIP8
6N136S Optocoupler DIP8
VCEO(V):30V
IC(mA):50mA
VR(V):5V
IF(mA):25mA
Package:SMD-8

Product Details

Our advantages 

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The 6N135,6N136,SL450X series combine an AlGaAs infrared emitting diode as the emitter  which is optically coupled to a silicon high speed photo transistor in a plastic DlP8 package with different lead forming options.

A separate design between photodiode and transistor reduces the base-collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers.


Features

●High isolation 5000 VRMS

●DC input with transistor output

●Operating temperature range -55℃ to 100℃

●REACH compliance

●Halogen free (Optional)

●MSLclass 1

●Regulatory Approvals

●UL-UL1577

●VDE-EN60747-5-5(VDE0884-5)

●CQC-GB4943.1,GB8898

●cUL-CSA Component Acceptance Service Notice No. 5A


Applications

●Line receivers

●Telecommunication equipment

●Out interface to CMOS-LSTTL-TTL

●Wide bandwidth analog coupling

●Pulse transformer replacement

●Computer-peripheral interface


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Service hotline

+86 0755-83044319

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