The SL10N06A is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 10A, known for its low on-state resistance (35mΩ @ 10V, 5A) and relatively low threshold voltage (2.5V @ 250uA). These characteristics make the SL10N06A an ideal power management and current control component in the la……

The SL2328A is an N-channel MOSFET with a 100V drain-source voltage and 2A continuous drain current. It is renowned for its low on-state resistance (310mΩ @ 10V, 2A) and relatively low threshold voltage (3V @ 250uA). These features make the SL2328A an ideal switch and regulating component in motor control, especially i……

The SL20N10 is an N-channel MOSFET with a 100V drain-source voltage and 20A continuous drain current, renowned for its low on-state resistance (70Ω at 10V) and low threshold voltage (1.5V at 250uA). These characteristics make the SL20N10 an ideal switch and signal processing component in the battery management system o……

The 2N7002KT is an N-channel MOSFET with a 60V drain-source voltage and a 1A continuous drain current. It is renowned for its low on-resistance (2.5Ω @ 10V) and relatively low threshold voltage (1.5V @ 250μA). These features make the 2N7002KT an ideal switch and signal processing component in miniaturized medical elect……

The SL2308 is an N-channel MOSFET with a 60V drain-source voltage and a 1.8A continuous drain current. It features low on-state resistance (135mΩ@10V, 1.8A) and serves as a power electronic component known for its fast switching speed, low power consumption, and high reliability. These characteristics make it an ideal ……

SL9968 is an N-channel MOSFET with a 100V drain-source voltage and 15A continuous drain current, renowned for its low on-state resistance (80mΩ@10V, 4A) and lower threshold voltage (2V@250uA). These characteristics make SL9968 an ideal power semiconductor device in power management systems, particularly in applications……

The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω @ 10V) and relatively low threshold voltage (2.5V @ 1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especi……

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250uA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new……

The BSS131 is an N-channel MOSFET with excellent performance characteristics. It has a high voltage tolerance (240V) and a moderate current rating (0.1A), making it ideal for low-voltage and Medium Voltage switching and power control applications. In addition, its low on-resistance (9.07Ω @ 4.5V, 0.09A) and low thresho……

The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low ……

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ @ -10V, -15A) and low thre……

The SL25N10 is an N-channel MOSFET with outstanding performance parameters. It features a high drain-source voltage (100V) and a large current-carrying capacity (25A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (35mΩ @ 10V, 15A) and low thres……