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S9012 PNP Bipolar Transistor SOT-23 S9012 PNP Bipolar Transistor SOT-23 S9012 PNP Bipolar Transistor SOT-23
S9012 PNP Bipolar Transistor SOT-23
VCEO(V):-25V
IC(A):-500mA
PD(W):300mW
VCE(sat)(V):-0.6V
fT(MHz):150MHz
Package:SOT-23

Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description:
The S9012 is a versatile PNP bipolar junction transistor (BJT) designed for applications where moderate voltage and current requirements are necessary. Encapsulated in the SOT-23 package, it offers compact size without compromising on performance. With a maximum collector-emitter voltage (VCEO) of -25V and a collector current (IC) rating of -500mA, the S9012 is suitable for low-power circuit designs. It can handle power dissipation (PD) up to 300mW and features a low collector-emitter saturation voltage (VCE(sat)) of -0.6V, ensuring minimal voltage drop during operation. The transistor exhibits a transition frequency (fT) of 150MHz, making it ideal for applications requiring high-frequency response and efficient switching.

Features

● High Collector Current.(IC= -500mA)
 Complementary To S9013.
 Excellent HFE Linearity.

Applications
 High Collector Current.

S9012_00.jpg

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